发明名称 REPAIR CIRCUIT OF FLASH MEMORY
摘要 PURPOSE: A repair circuit of a flash memory is provided to simplify an overlapped circuit, and to decrease the area of the repair circuit by comparing an address and output data of a CAM part. CONSTITUTION: The repair circuit of a flash memory includes a CAM part(20), a CAM cell multiplexer(30), and a data comparing part(40). The CAM part(20) includes numerous CAMs(CAM0 to CAMn), and each CAM includes a CAM cell storing address and I/O information at which a failure is generated, and a latch part sensing data stored at the CAM cell and latching the data. The CAM cell multiplexer(30) selects the CAM for being sensed according to a signal(SEC), and transmits CAM data to the data comparing part(40). The data comparing part(40) compares the CAM data and an address(ADDR). At this time, when the CAM data coincides in an address(ADDR), the data comparing part(40) outputs a READ of a high level. When the CAM data coincides in an address(ADDR), the data comparing part(40) outputs a READ of a low level.
申请公布号 KR20010061472(A) 申请公布日期 2001.07.07
申请号 KR19990063968 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JUNG, JONG BAE
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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