发明名称 ERASING METHOD OF FLASH MEMORY
摘要 PURPOSE: An erasing method of a flash memory is provided to decrease an erasing time by preventing an erasing operation at an erased cell. CONSTITUTION: When an erase command is inputted(S310), a verification operation is performed in order to decide whether a cell has been erased or not(S320). After the verification, it is decided whether there is a failure at a pertinent address or not(S330). If there is no fail, data has been erased at the pertinent address. After this, it is decided whether the pertinent address is the final address or not(S340). If the pertinent address is the final address, the cell including the pertinent address has been already erased, and an erase operation is not performed(S350).
申请公布号 KR20010061470(A) 申请公布日期 2001.07.07
申请号 KR19990063966 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHA, BYEONG GWON;KWON, O WON;SEO, SEONG HWAN;SHIN, GYE WAN
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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