| 摘要 |
PURPOSE: A ferroelectric memory device and a method for manufacturing the same are provided to effectively prevent the diffusion between a capacitor electrode material and a metal wiring material. CONSTITUTION: The first insulating film(12) is formed on a substrate with each transistor formed in a cell region and a peripheral region. A ferroelectric capacitor consisting of a bottom electrode, a ferroelectric film(16) and a top electrode is formed on the first insulating film. The second insulating film is formed on the entire surface of the substrate, and is selectively etched to form a contact hole exposing the top electrode of the ferroelectric capacitor. An iridium oxide diffusion barrier pattern(20) is formed in close to the top electrode of the ferroelectric capacitor through the contact hole. The second and first insulating films are selectively etched to a contact hole exposing an active region(11A) of a cell region capacitor. The first conductive film is formed on the entire surface.
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