METHOD FOR FABRICATING FLASH MEMORY CELL

摘要

PURPOSE: A method for fabricating a flash memory cell is provided to prevent a substrate from damaging due to a self-align source etching and to improve the property of a gate by connecting source contacts with metal to form a source line. CONSTITUTION: A field oxide film(60) is formed on a silicon substrate(61), and a gate(62) is formed thereon. A cell source(S) and a drain region(D) is formed by an ion injecting process. After the first interlayer insulating film(63) is formed on the whole structure, a source contact hole(65) and the first drain contact hole(64A) exposing the source(S) and the drain(D) are formed respectively. A metal layer is buried in the source contact hole(65) and the first drain contact hole(64A) to form a drain contact(66) and a source line(67). A metal wiring material is formed and patterned to the first metal line(68) in the source line(67). After the second interlayer insulating film(69) is formed on the whole structure, the second drain contact hole(64B) is formed on the second interlayer insulating film(69) to expose the drain contact(66). A metal layer is formed and patterned on the whole structure to bury each drain contact hole(64A), so that a bit line(70) is formed.