| 摘要 |
PURPOSE: A method of forming conductive lines of a semiconductor device is provided to simplify a process for the semiconductor device and enhancing the features and reliability of the device by eliminate a process of forming a mask insulation film through contact etching using a silicon containing photosensitive film. CONSTITUTION: An interlayer insulation film(23) is formed on the first conductive lines(21). A silicon containing photosensitive pattern(25) is formed on the interlayer insulation film(23). The silicon containing photosensitive pattern(25) is used as a mask to etch the interlayer insulation film(23) with plasma using oxygen and nitride gases to form a silicon oxide film(27) on the photosensitive film pattern(25). The silicon oxide film(27) and the photosensitive film pattern(25) are removed. The silicon oxide film(27) is used as an etching barrier to eliminate the necessity of a mask insulation film.
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