FILM FORMING METHOD AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A film forming method and semiconductor device are provided to form an insulating film containing silicon on the substrate by to performing plasma the compound having the siloxane bonds and the oxidizing gas to react with each other. CONSTITUTION: A chamber(101) is used to form the film, and two opposing electrodes(102) and an upper electrode(104) are provided in the chamber(101). Here, the lower electrode(102) serves also as a loading table on which a substrate(103) is loaded. A heater for heating the substrate(103) up to the desired temperature is built in the lower electrode(102). A power supplying lines(105) supply a power to the heater. The upper electrode(104) serves also as a shower head that supplies a gas to an interior of the chamber(101). A first high-frequency power supply(107) and a second high-frequency power supply(109) are connected to these two electrodes(104,102) respectively. The gas in the camber(101) can be performed plasma by supplying a high-frequency power to the gas in the chamber(101) from one of these high-frequency power supplies(107, 109), or from both the power supplies.