发明名称 ERASE METHOD OF FLASH MEMORY
摘要 PURPOSE: An erase method of a flash memory is provided to decrease a performance time in the time of a post program by applying different erase pulses each other according to the number of a bad cell. CONSTITUTION: After an erase is performed, it is confirmed whether the erase is successful or not. When the erase is not successful, a counter(30) counts the number of a cell at which the erase is failed. After this, different erase pulses each other are applied according to the number of the failed cell. At this time, the different erase pulses each other are applied by controlling an erase pulse control part(50) through a decoder(40), the less the number of the failed cell is, the shorter the pulses is.
申请公布号 KR20010061506(A) 申请公布日期 2001.07.07
申请号 KR19990064002 申请日期 1999.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SEUNG DEOK;YOO, SEONG JIN
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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