METHOD FOR MANUFACTURING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE USING GROWTH-TYPE DEFECT

摘要

PURPOSE: A method for manufacturing a charge storage electrode of a semiconductor device using a growth-type defect is provided to increase capacitance by guaranteeing a large surface area as compared with a conventional hemispherical grain(HSG). CONSTITUTION: The first polysilicon layer(24) is formed on a predetermined lower layer. Contamination by metallic impurity is induced on the first polysilicon layer. The second polysilicon layer(25) having an uneven surface including a plurality of growth-type defects is formed on the first polysilicon layer by using a chemical vapor deposition(CVD) method. The first and second polysilicon layers are patterned to define a unit charge storage electrode pattern.