| 摘要 |
PURPOSE: A contact making method is provided to easily remove a poly stringer by forming an insulation spacer of a stack structure and removing an upper layer of the stack structure using an etch selective ratio of the poly stringer and an intermediate layer of the stack structure. CONSTITUTION: A device isolation film(33) is formed on a semiconductor substrate(31) so as to define an active region. A gate oxide film, a conductor(35) for a gate electrode and a mask insulator(37) are stacked on the substrate. A stack structure is formed by patterning the gate oxide film, the conductor(35) for a gate electrode and the mask insulator(37). The first oxide film(39), a nitride film(41) and the second oxide film(43) are sequentially formed on an entire surface of a resultant structure. An insulation spacer(39,41,43) is formed on a sidewall of the gate electrode being the stack structure. A polysilicon is formed on an entire surface so as to be deposited on an upper side of the gate electrode. A contact pad is formed at bit line and storage electrode portions, so that a poly stringer is formed. The poly stringer is lifted off by removing the spacer being the second oxide film(43).
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