ELECTROSTATIC PROTECTION DEVICE

摘要

PURPOSE: An electrostatic protection device is provided to improve the reliability of a device by increasing tolerance to a CDM(Charged Device Model) and an ESD(ElectroStatic Discharge). CONSTITUTION: An input buffer(50) is composed by forming a gate electrode and a source/drain region(55) including an n+ diffusion layer on an upper portion of a p-well(51). A diode is comprised by forming the n+ diffusion layer(55) connected with the gate electrode of the input buffer(50) and a p+ diffusion layer(54) connected with a grounding end(Vss) at both sides of the input buffer(50). An n-well guard ring(52) is composed by forming a p+ diffusion layer(54) connected with the n+ diffusion layer(53) of the diode and the n+ diffusion layer(53) connected with a power end(Vcc).