FLASH EEPROM CELL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A flash electrically erasable programmable read-only memory(EEPROM) and a method for manufacturing the same are provided to increase a data retention capacity by forming the EEPROM with a capacitor formed in a source terminal. CONSTITUTION: The first interlayer dielectric(108) is formed on the entire surface of a substrate, and is etched to form the first contact hole for exposing a source(106) and a drain(107). The first contact hole is buried with a conductive material such as polysilicon or tungsten to form a plug(109). A conductive layer is formed on the entire surface of the substrate, and is patterned to form a bit line(110) connected to the drain. A pad(111) is formed on a portion to be connected to the source. After the second interlayer dielectric(112) is formed on the entire surface of the substrate, a desired region of the second interlayer dielectric is etched to form the second contact hole for exposing the pad. The third polysilicon film(113) is formed on the entire surface to bury the second contact hole, and is patterned to form a bottom electrode.