TWO-STAGE AIN-PVD IMPROVING FILM CHARACTERISTIC

摘要

PURPOSE: A method for depositing aluminum nitride(AlN) layers on a substrate is provided to improve characteristics of the AlN layers and to increase a deposition speed by using two-stage PVD(Physical Vapor Deposition). CONSTITUTION: A first aluminum nitride layer is vapor deposited on a substrate(116) at a first chamber pressure, and then a second aluminum nitride layer is vapor deposited on the resultant aluminum nitride nucleation layer at a higher second chamber pressure. The first aluminum nitride layer is vapor deposited by sputtering an aluminum target(104) at about 1.5-3 milli-torr chamber pressure in a nitrogen and inert gas plasma in a treatment chamber(36). The second aluminum nitride layer is vapor deposited by carrying out sputtering at about 5-10 milli-torr chamber pressure. The above treatments can be performed in the same treatment chamber while maintaining the temperature of the substrate at preferably 125-500°C. By this method aluminum nitride having preferred crystal orientation can be obtained at high deposition rate, and the characteristics of the layers can be improved.