METHOD FOR FORMING METAL LINE HAVING DIELECTRICS OF VAPOR PHASE BY USING DUAL DAMASCENE PROCESS

摘要

PURPOSE: A method for forming a metal line having the dielectrics of vapor phase by using a dual damascene process is provided to improve the integration density of a high-integrated device and the property of the device by applying a sealing oxide of high transmissivity and the dual damascene process simultaneously. CONSTITUTION: A dual damascene process is applied to form a dielectric of vapor phase by a carbon ashing. The oxide of one material selected from the group of Zr, Ce, Mg, Ca and Gd, or the oxide of the compound that is mixed at least two materials selected from the group is applied as the first sealing oxide(103) and the second sealing oxide(105).