| 摘要 |
PURPOSE: A semiconductor device and a method for fabricating the same are to prevent a void from being generated in a contact hole, and ensure an overlap margin in forming a butting contact for bridging a gate and a drain. CONSTITUTION: A gate(32) is formed on a silicon substrate(30) with a gate oxide layer(31) formed thereon. The gate is formed of silicon. A source(33A) and a drain(33B) are formed in the silicon substrate on both ends of the gate by performing the first ion implantation process. The first metal pattern is formed to bridge the gate and the drain. An insulating spacer is formed on the sidewall of the gate. The source and the drain are formed in the silicon substrate on both ends of gate by performing the second ion implantation process. The second metal layer is formed on the entire structure. The first metal pattern is transformed into the first silicide layer(34A) by an annealing process. The second silicide layer is formed on the surfaces of the source and the drain.
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