| 摘要 |
PURPOSE: A flash memory device is provided to decrease time and costs in the time of manufacturing two element having a different bank size each other by manufacturing an element through one global bit line mask. CONSTITUTION: A flash memory device includes a bank size control signal generator(201), pass transistors(202,203), and a bank size control switch(211,212). The bank size control signal generator(201) outputs different signals according to a program stage or an erase state of a flash memory cell. The pass transistors(202,203) decides a bank size by selecting a sector according to an output signal of the bank size control signal generator(201). The bank size control switch(211,212) select a local bit line and a word line of the final sector of a selected bank according to the output signal of the bank size control signal generator(201) and output signals of pre-decoders(207,209,215), and controls the bank size.
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