HIGH-INTEGRATED SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A high-integrated semiconductor memory device and a fabricating method thereof are provided to prevent conductors from shorting by not forming a bit line contact in a dummy cell region placed in the center of a cell array. CONSTITUTION: A cell array comprises a normal cell region and a dummy cell region. A plurality of word lines(4) are formed on a substrate at regular intervals. A source/drain impurity region is formed on the active region(2) placed in the both sides of the word lines(4), and an insulating film sidewall(5) is formed on the side of the word lines(4). A plurality of plugs for capacitor node contact and plugs(6a, 6b) for bit line contact are formed on the source/drain impurity region. A contact hole(8) is formed on the plug(6a) for bit line contact of the cell array except the plug(6b) of bit line contact connecting the dummy cell region with the peripheral region. A bit line(9) is formed to be vertical to the word lines(4).