METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve the integration degree and the productivity of the semiconductor device by increasing the number of net dies. CONSTITUTION: An interlayer dielectric is formed on a pattern of a semiconductor substrate. A lower poly pattern is deposited on the interlayer dielectric. Then, a photoresist mask pattern is formed on the lower poly pattern. At this time, a close shot(6) is carried out with respect to a pattern adjacent to an EBR(edge bead removal) area. After depositing the interlayer dielectric, the pattern adjacent to the EBR area is treated with a blanket open shot(4), thereby removing the interlayer dielectric. Then, a doping poly is deposited to form an upper poly pattern. The upper and lower poly patterns are stacked by performing the close shot(6).