| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor whose withstand voltage is high, and whose conduction resistance is low. SOLUTION: A cell 1 comprises a knot 81 whose base region 54 is circular located in the center, three branches 82 whose base region is rectangular arranged at an angle of 120 deg., and circular base regions connected to both ends of the rectangular base region. A number of cells 1 are uniformly arranged in an active region 73 of a drain layer. Since the circumference length of the base region 54 of the cell 1 is large, the conduction resistance is small, and the capacity between gate and drain is small compared with that of a polygonal cell. Also, since the vase region 54 has no angle, the withstand voltage is high. If the same conduction type ohmic region 57 as the base region 54 is arranged at the bottom surface of a source region 61 in the branch 82, the breakdown voltage rises.
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