| 摘要 |
PURPOSE: A method for forming a capacitor is to improve an insulating characteristic between cylindrical storage electrodes by bending an upper portion of an insulating film toward a region on which a storage electrode is formed. CONSTITUTION: The first insulating film(13) is formed on a lower insulating layer(11) of a substrate. The first insulating film and the lower insulating layer are etched to form a storage electrode contact plug(15). The second insulating film pattern is formed on the contact plug. The third insulating film spacer is formed on a sidewall of the second insulating film pattern, and the fourth insulating film is formed on the entire surface. The fourth insulating film(21) is etched to expose the second insulating film pattern. The second and fourth insulating films are removed, with the fourth insulating film deposited on the third insulating spacer being remaining. A conductive layer for a storage electrode connected to the contact plug is formed on the entire surface, and then the fifth insulating film is formed on the conductive layer.
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