| 摘要 |
PURPOSE: A method for manufacturing a semiconductor MOS transistor is provided to prevent metal oxidation inside of a gate electrode during manufacturing in order to increase a margin of line width of the gate electrode. CONSTITUTION: The semiconductor MOS transistor manufacturing method includes following steps. At first, a gate oxide layer, a doped poly silicon layer(16) and a metallic layer(20) are accumulated sequentially on a surface of the substrate. Then, a gate electrode is formed by patterning the accumulated metallic layer and the doped polysilicon layer. Then, a spacer(24) of dielectric material is formed on a sidewall of the gate electrode. Then, a TEOS(tetra etly ortho silicate) is vaporized by using plasma on the result. At fifth, the TEOS layer is etched to leave only on the surface of the substrate to form a screen dielectric layer(26') on th surface of the substrate. At last, a source/drain region(28) is formed in the substrate to form an impurity injection step by using the gate electrode and the spacer as a mask.
|
