| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to increase the characteristic of the device by preventing device characteristic from degenerated at the edge of a tunnel oxide layer. CONSTITUTION: At first, a floating poly gate(45) with a columner structure is accumulated on the surface of a semiconductor substrate having a tunnel oxide layer. Then, an interlayer dielectric layer as well as a control gate(49) are accumulated on the floating poly gate with a columner structure. The accumulated structure on the semiconductor substrate is amorphously etched at a low pressure to form a normal gate layer. The floating poly gate of the columner gate is formed by vaporizing poly at a temperature between 550 and 620 degrees and doping POCl3 at a temperature between 800 and 900 degrees.
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