CHEMICAL MECHANICAL POLISHING MACHINE USING MAGNETIC FIELD AND POLISHING METHOD THEREOF

摘要

PURPOSE: A chemical mechanical polishing machine and a polishing method thereof are provided to enhance polishing uniformity by adjusting the distribution of an abrasive compound supplied between a wafer and a polishing pad with magnetic field. CONSTITUTION: A chemical mechanical polishing machine consists of: a wafer(30) rotatably fixed to a wafer rotating shaft(35); a polishing pad(10) in contact with the bottom of the wafer rotating on a pad rotating shaft(15) and polishing the wafer with an abrasive(20); a magnetic field generator(40) making the distribution of the abrasive compound uniform by feeding magnetic fields(42) to the polishing pad; and a controller(50) adjusting the size and position of the magnetic fields by controlling the magnetic field generator. When the magnetic field generator feeds the magnetic fields, an anode(44) and a cathode(46) are formed on the polishing pad and the polishing pad is rotated. Then, the wafer shaft is rotated to turn the wafer oppositely to the polishing pad and the abrasive compound is supplied between the wafer and the polishing pad.