| 摘要 |
PROBLEM TO BE SOLVED: To prevent moisture from entering a device from an interlayer insulating SOG film, at the side wall of the edge of a device chip and an opening for bonding. SOLUTION: A dummy pattern 202a is formed outside the circuit forming region of a device and inside the edge of a device chip in a plane pattern. Moisture is prevented from entering the circuit forming region via the SOG film by almost completely removing the SOG film from the dummy pattern 202a. |
