| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an SOI wafer which can obtain good element characteristics. SOLUTION: This method comprises a step for forming a pad oxide layer, a nitride layer and a mask oxide layer one by one on one side of a semiconductor substrate, a step of etching for exposing an isolation region on a semiconductor substrate, a step for forming a trench by etching the exposed semiconductor substrate region, a step for removing a mask oxide layer, a step for forming a field oxide layer with a bird's beak by field oxidation of a bottom of a trench, a step for removing a field oxide layer, a step for forming a trench-type isolation layer by burying an oxide layer inside a trench, a step for removing the nitride layer and a pad oxide layer, a step for depositing a first insulation layer on an isolation layer and a semiconductor substrate, a step for depositing a second insulation layer on a base substrate, a step for bonding a semiconductor substrate and a base substrate so that the first insulation layer and the second insulation layer come into contact with each other, a step for primarily polishing the other side of a semiconductor substrate by using an isolation layer as a polishing stoppage layer, and a step for secondarily polishing the other side of a semiconductor substrate to the bird's peak part for obtaining a semiconductor layer of a desired thickness.
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