METAL LAYER OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A metal layer of a semiconductor device and a method for forming the same are provided to improve an optical contrast by increasing a mirror fill factor and flattening a mirror metal layer. CONSTITUTION: A flattened protective layer(34) is formed on a semiconductor substrate(31) including a transistor and a capacitor electrode(33). An absorption layer(36) is formed on the flattened protective layer(34). An insulating layer(35) is formed on an upper face of the absorption layer(36). A via hole is formed on the flattened protective layer(34) and the insulating layer(35) to expose a part of the capacitor electrode(33). A tungsten plug(38a) and a flattened buried layer(39) are formed within the via hole. A mirror metal layer(40) is formed on the insulating layer(35) and the flattened buried layer(39). An insulating layer spacer(42) is formed on the mirror metal layer(40).