| 摘要 |
PURPOSE: A method for forming a charge storage electrode of a capacitor is provided to prevent a water mark defect and reduce a bit-fail of a capacitor by using NF3 as an oxide layer etchant. CONSTITUTION: A charge storage electrode pattern is formed on a semiconductor substrate. A silicon seed is formed on a surface of the charge storage electrode. A hemispheric grain projection(60) is formed by performing an annealing process using high vacuum. A plasma doping process is performed to supplement a dopant on the whole structure. A dry cleaning process for the charge storage electrode is performed. A capacitor dielectric(80) is laminated on the charge storage electrode by performing a nitride process.
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