METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a gate electrode of a semiconductor device is provided to improve an electrical characteristic of a semiconductor device by forming a gate insulating layer of high dielectric material. CONSTITUTION: A gate oxide layer(20) and a polysilicon layer are deposited on a semiconductor substrate(10). A gate is formed by etching the polysilicon layer and the gate oxide layer(20) and forming a spacer layer(30). An interlayer dielectric(40) is laminated on the gate. The interlayer dielectric(40) is flattened. The polysilicon layer and the gate oxide layer(20) are removed from the inside of the spacer layer(30) by performing an etching process. A plurality of gate insulating layer(70) is laminated on the etched portion of the spacer layer(30). A gate electrode layer is buried within a groove portion of the gate insulating layers(70).