METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is to prevent the damage of a silicon substrate and ensure an active region of a cell by using a self-aligned contact etching method. CONSTITUTION: The first conductive layer(23) including a gate insulating layer(22) is formed on a silicon substrate(21) with a cell region(I) and a periphery circuit region(II). The first etching stop layer(24) is formed on the first conductive layer. The first sidewall spacer(25) is formed to contact with both sides of the first conductive layer including the first etching stop layer by depositing and etching a sidewall insulating layer on the entire surface of the silicon substrate. An impurity diffusion layer(26) is formed by implanting impurity ions into the entire surface of the silicon substrate, using the first sidewall spacer and the first conductive layer as a mask. A photoresist pattern is formed by coating and patterning a photoresist layer on the silicon substrate including the first sidewall spacer to define a contact hole. The second conductive layer is deposited on the photoresist pattern including the contact hole. A plug pad(30) is formed to bury the contact hole.