METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL GROWTH

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device using selective epitaxial growth is provided to prevent lowering of an insulating characteristic due to wrong burial. CONSTITUTION: A surface of a silicon substrate(40) of an isolation region is exposed by forming an anti-oxidation pattern on the silicon substrate(40). A trench is formed within the silicon substrate(40) by etching selectively the exposed silicon substrate(40). An insulating layer spacer(43A) is formed on a wall of the trench. A selective epitaxial layer(44) is formed on the exposed silicon substrate(40) of a bottom of the trench. An isolation layer(45) is formed by oxidizing the selective epitaxial layer(44). The anti-oxidation layer is removed.