TRANSISTOR OF SEMICONDUCTOR DEVICE USING SELECTIVE EPITAXIAL LAYER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A transistor of a semiconductor device and a manufacturing method thereof are to form a deep junction region in the middle region between gate lines and to form a shallow junction region between the deep junction region and a gate spacer, thereby reducing leakage current while improving an SCE(short channel effect). CONSTITUTION: A substrate(34) is provided with an active region and a field region. In the field region is formed a trench(36) with which an insulating layer is filled to form an isolation layer(38). On the active region are successively formed a gate insulating layer, the first/second gate conductive layers and a gate passivation layer, and using a photolithography, a gate line(42) consisting of a gate insulating layer pattern(42a), the first/second gate conductive layers patterns and a gate passivation layer pattern are formed thereafter. On the resultant structure, a spacer substance layer is formed and then anisotropically etched to form a gate spacer(44) until the surface of the substrate is exposed.