| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having such an active layer that the size of its realizable band gap extends over a wide range. SOLUTION: A semiconductor layer element 100 is constituted by successively forming a buffer layer 12, n-type GaN contact layer 13, n-type Al0.1Ga0.9N optical clad layer 14, n-type GaN light guide layer 15, TlGaN/GaN light emitting layer 16, p-type Al0.1Ga0.9N layer 17, p-type GaN light guide layer 18, p-type Al0.1Ga0.9N optical clad layer 19, and p-type GaN contact layer 20 on a sapphire substrate 11. The TlGaN/GaN light emitting layer 16 is formed by alternately laminating four GaN barrier layers and three TlGaN well layers upon another. The light emitting wavelength of the laser element 100 is set by adjusting the Tl composition in the light emitting layer 16. |
