发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To decrease mask slips during drawing and to improve the yield of products by an improvement in position accuracy in an electron beam drawing process for executing pattern formation to a mask. SOLUTION: A top table 1 on a drawing table of an electron beam drawing system has a smooth surface composed of a dielectric material 1a and is constituted by embedding an electrode 3 connected to from a DC power source 2 therein. A mask substrate 4 consists of a shading film 8 formed on its main surface, an electron beam resist 9 covering the top thereof and conductive films 5 formed on flanks and rear surface side. The conductive films 5 of the mask substrate 4 placed on the top table 1 are grounded, by which circuits are formed among the DC power source 2, the electrode 3, the dielectric material 1a and the mask substrate 4. The electron beam resist 9 is irradiated with electron beams 7 in the state of surely holding and fixing the mask substrate 4 to the top table 1 by the electrostatic attraction force generated by impressing DC voltage to these circuits, by which mask patterns are drawn.</p>
申请公布号 JP2001183807(A) 申请公布日期 2001.07.06
申请号 JP19990363501 申请日期 1999.12.21
申请人 HITACHI LTD 发明人 IKEDA KAZUNORI;HOGEN MORIHISA;HASEGAWA NORIO;OKAMOTO YOSHIHIKO
分类号 H01J37/20;G03F1/76;G03F1/78;G03F7/20;H01J37/305;(IPC1-7):G03F1/08 主分类号 H01J37/20
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