发明名称 READ-OUT METHOD OF SEMICONDUCTOR STORAGE AND SEMICONDUCTOR STORAGE
摘要 <p>PROBLEM TO BE SOLVED: To reduce current consumption at the time of continuous read-out of plural pages. SOLUTION: This device is provided with a first latch circuit latching data of the first half out of divided two pages and a second latch circuit latching data of the latter half. When plural pages are read out continuously, access of the next one page is performed immediately before finish of data of serial output of data of the present one page, information of the memory cell is reflected to a bit line, data of the first half out of data of the next one page are taken in the first latch circuit, after finish of all serial output of data of the present one page, data of a page of the latter half of data of the next one page are taken in the second latch circuit, as serial output of data of the first half out of data of the next one page taken in the first latch circuit is started, the number of times of driving of a word line in read-out of one page is made one time, and data of plural pages can be read-out continuously.</p>
申请公布号 JP2001184874(A) 申请公布日期 2001.07.06
申请号 JP19990362819 申请日期 1999.12.21
申请人 SONY CORP 发明人 NOBUKATA HIROMI
分类号 G11C16/02;G11C16/04;(IPC1-7):G11C16/02 主分类号 G11C16/02
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