METHOD FOR FORMING INTER-METAL INTERLAYER DIELECTRIC OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an inter-metal interlayer dielectric of a semiconductor device is provided to improve the productivity by preventing a lifting phenomenon and a crack. CONSTITUTION: A metal line(3) is formed on a lower interlayer dielectric(2). A SiOxCy thin film is coated by the first interlayer dielectric(4). A surface of the SiOxCy thin film is processed by using a gas plasma including a carbon. The second interlayer dielectric(5) is formed on the SiOxCy thin film. The second interlayer dielectric(5) is a capping insulating layer of SiOxFy. A via contact is formed by etching the second interlayer dielectric(5). The contact mask is removed.