| 摘要 |
PURPOSE: A thin film transistor is provided to simplify the manufacturing processes and improve an insulating property by using aluminum and tantalum(Al-Ta) films as double gates. CONSTITUTION: A first gate electrode(12) made of an aluminum film and a second gate electrode(13) made of a tantalum film are formed on a glass substrate(11). The double gates(12,13) have a mesa structure by the difference of etching selectivity between the aluminum and tantalum films. A first gate oxide(14) made of (Al-Ta)Ox is formed by anodizing. After depositing a second gate oxide(15) on the first gate oxide, an active layer(16) is formed. Then, a pixel electrode(17) made of ITO(Indium Thin Oxide) is formed on the active layer.
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