METHOD FOR FORMING TRANSISTORS IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method for forming a transistor is provided to prevent degradation of a characteristic of a device due to an increase of a junction capacitance and the threshold voltage by forming a device isolation film below a gate electrode. CONSTITUTION: A method for forming a transistor forms a device isolation film(13) defining an active region, where another device isolation film(15) is formed below a region where a gate electrode will be formed. A portion on the device isolation film(15) is etched. Silicon is buried into a portion on the device isolation film(15). A gate oxide film and a gate electrode on the device isolation film(15) and a silicon stack structure are patterned. A source/drain junction region is formed in the semiconductor substrate exposed outwardly to the gate electrode, thus forming a transistor.