| 摘要 |
PURPOSE: A method for forming a source/drain of a MOS transistor is to improve a channeling effect and a leakage current characteristic by changing a surface periphery of a substrate to be an amorphous state, thereby increasing an electrical characteristic of the substrate. CONSTITUTION: An isolation film(30) is formed on a substrate(20), and then is implanted with a high concentration ion to form an N-well(25). A gate oxide film(35), a gate electrode layer(40) and a mask oxide film(45) are deposited on the entire surface of the substrate, and are etched to form a gate and a spacer film(50) on a side portion. After a photoresist film(55) is deposited on the gate, the substrate is provided under a bottom thereof with cooling equipment(60) to implant a boron ion into the substrate, so that a pre-amorphization layer is formed on the substrate on which a source/drain region is to be formed. At that time, a temperature of the substrate is maintained in a range of 0 to 78 deg.C.
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