| 摘要 |
PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to connect stably one device with the other device by reducing a contact resistance. CONSTITUTION: An active/passive device is formed on a silicon substrate. An interlayer dielectric(11) is formed on the silicon substrate. A contact hole for connecting the active/passive device with an upper metal layer is formed by patterning the interlayer dielectric(11). A polysilicon is deposited on the whole structure. A polysilicon layer(13) is formed within the contact hole(12). A barrier metal layer(14) and a metal layer are formed by laminating a Ti/TiN and a tungsten. A metal line layer(16) and anti-reflective layer(17) are formed by depositing an aluminium and the Ti/TiN. The contact hole is buried by etching back the barrier metal layer(14) and the metal layer.
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