METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is to increase electrode area of the capacitor in H-frame shape, thereby preventing a capacitor lifting by a stabilization and improving yields of the device by increasing capacitance. CONSTITUTION: The first interlayer dielectric(25), a nitride layer and the second interlayer dielectric(30) are formed on a semiconductor substrate(21). A contact hole is formed by removing the second interlayer dielectric, the nitride layer and the first interlayer dielectric. Polysilicon is deposited in the contact hole and then entirely etched to form a capacitor contact plug. The third interlayer dielectric(32) is formed on the entire surface including the capacitor contact plug. A capacitor mask layer is formed on the third interlayer dielectric. Using the capacitor mask layer, the third/second interlayer dielectrics and the nitride layer are removed and the first interlayer dielectric is over-etched to expose the capacitor contact plug.