CAPPING LAYER FOR EXTREME LOW PERMITTIVITY FILM

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a silicon-carbide type or silicon oxycarbide capping layer on an ELK film used as a dielectric material in an integrated circuit. SOLUTION: An amorphous silicon carbide capping layer is deposited using a plasma process in a non-oxidizing environment and a silicon oxycaribide capping layer is deposited using an oxygen-deficient plasma process.