| 摘要 |
PROBLEM TO BE SOLVED: To reduce the generation of a leakage current in a Schottky barrier diode. SOLUTION: A Scbottky barrier diode has an N-well 2 formed in a P-type semiconductor substrate 1, a P-well 3 formed in a position of the N-well 2 which exists at a predetermined depth, an LN layer 4 which exists in the surface layer of the N-well 2 and is formed on the P-well 3, an N-layer (cathode electrode) 5 formed in the LN-layer 4, and an anode electrode 7 formed on the LN-layer 4. |
