| 摘要 |
PROBLEM TO BE SOLVED: To enable fine processing with high shape dimensional precision by causing no side-etching of the first intermediate layer and the lower layer resist during overetching of the second intermediate layer. SOLUTION: A lower layer resist 2 is formed on a substrate 1 and overlaid with a first intermediate layer 6 of a material high-resistant to a fluoric and chloric plasma but removable by an oxygen plasma, which is then overlaid with a second intermediate layer 7 of a material high-resistant to an oxygen plasma, and an upper layer resist 4 is formed thereon and patterned into a predetermined shape by a photolithography technology. Using it as a mask, a pattern of the second intermediate layer is formed by dryetching using fluoric or chloric gas, and further it is used as a mask to dry-etch the first intermediate layer and the lower layer resist simultaneously with oxygen gas. In the manufacture of a thin film head, this multilayer resist is utilized to form a resist frame or a resist pattern as well as the top magnetic film of an inductive head. |
