发明名称 ELECTRON BEAM MASK, ITS MANUFACTURING METHOD AND EXPOSURE METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide an electron beam mask that enables a high quality exposure and eliminates the problems of a doughnut pattern and a leaf pattern in batch exposure process and its method of manufacturing, as well as an exposure method that can perform exposure of high quality rising the electron beam mask. SOLUTION: This electron beam mask 1 has thin films (membranes) 5 embedded in an aperture 4 that are the object of the doughnut and the leaf problems and protect unexposed part 3. The thin films 5 are made from a material through which an electron beam can pass.</p>
申请公布号 JP2001185472(A) 申请公布日期 2001.07.06
申请号 JP19990368719 申请日期 1999.12.27
申请人 NEC CORP 发明人 OBINATA HIDEO;YAMASHITA HIROSHI
分类号 H01L21/027;G03F1/20;G03F7/20;(IPC1-7):H01L21/027;G03F1/16 主分类号 H01L21/027
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