发明名称 |
ELECTRON BEAM MASK, ITS MANUFACTURING METHOD AND EXPOSURE METHOD |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electron beam mask that enables a high quality exposure and eliminates the problems of a doughnut pattern and a leaf pattern in batch exposure process and its method of manufacturing, as well as an exposure method that can perform exposure of high quality rising the electron beam mask. SOLUTION: This electron beam mask 1 has thin films (membranes) 5 embedded in an aperture 4 that are the object of the doughnut and the leaf problems and protect unexposed part 3. The thin films 5 are made from a material through which an electron beam can pass.</p> |
申请公布号 |
JP2001185472(A) |
申请公布日期 |
2001.07.06 |
申请号 |
JP19990368719 |
申请日期 |
1999.12.27 |
申请人 |
NEC CORP |
发明人 |
OBINATA HIDEO;YAMASHITA HIROSHI |
分类号 |
H01L21/027;G03F1/20;G03F7/20;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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