| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device whose level of integration is high, cost is low and reliability is high, relating to the semiconductor device containing a multilayer interconnection and the method for manufacturing it. SOLUTION: A first insulating layer is formed on the surface of a semiconductor substrate on which a semiconductor memory element provided with a connection terminal and a peripheral circuit element are formed, and a hole reaching the connection terminal is formed from the surface. A conductor is formed in the hole, and a second insulating layer is formed on the first insulating layer while covering the conductor, and a mask layer that has an opening in a region containing the semiconductor memory element and covers the peripheral circuit element is formed thereon. With the mask layer as a mask, the second and first insulating layers in the opening are etched to expose a side wall of the conductor. A capacitor dielectric film and a cell plate electrode layer are formed over the substrate so as to cover the exposed surface of the conductor, and the cell plate electrode layer over the insulating layer is removed. A wiring that is connected to the conductor on a second connection terminal is formed. |
