METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to increase a capacitance by forming a storage electrode as a hemispheral silicate glass and a TaSiN layer/TaON layer/TaSiN layer as a diffusion barrier. CONSTITUTION: A cylindrical storage electrode having a hemispheral silicate glass is formed on a semiconductor substrate(12). The first TaSiN layer as a diffusion barrier is formed on a whole surface of the structure. Storage electrodes are isolated by etching the first TaSiN layer. A TaON layer as a dielectric layer is formed on the whole surface of the structure. The second TaSiN layer as the diffusion barrier is formed on the TaON layer. A plate electrode(30) is formed on the second TaSiN layer.