METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve stability of a manufacturing process by using a self-aligned contact method. CONSTITUTION: An etching barrier(19) is formed on a semiconductor substrate(11). An interlayer dielectric is formed on the etching barrier(19). The interlayer dielectric is etched by using a contact mask as etching mask. An interlayer dielectric pattern(21b) is formed between an upper portion of a conductive line and the conductive line. A spacer(23b) is formed at a sidewall of the interlayer dielectric pattern(21b). The interlayer dielectric pattern(21b) and the etching barrier(19) are removed by performing an etching process. A contact hole is formed thereby. A contact plug is formed to bury the contact hole.