| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to prevent attack of an insulating film between bit lines and a lower electrode of a capacitor and to reduce the thickness of the capacitor using an organic insulating film of a low dielectric constant as a capacitor oxide film. CONSTITUTION: A method for manufacturing a capacitor forms an organic insulating film on a semiconductor substrate(21). A hard mask layer is formed on the organic insulating film. A contact mask layer is formed on the hard mask layer. The hard mask layer is removed using the contact mask layer as an etch mask and carbon-fluorine series gas as an etch gas. The organic insulating film is removed using an etch gas including oxygen to form a contact hole. Doping polysilicon being an electrode material is formed on the resulting entire surface. A photoresist film is applied on the doping polysilicon so that the contact hole can be completely filled. The doping polysilicon is removed to expose the hard mask layer using chemical mechanical polish process and the photoresist film is then stripped. The organic insulating film including the hard mask layer is removed using the oxygen plasma ashing process, thus forming a lower electrode(35) of a capacitor.
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