METHOD OF ETCHING FILM FOR PREVENTING GENERATION OF SURFACE ROUGHNESS

摘要

PURPOSE: A method of etching a film for preventing generation of the surface roughness is to further dry-etch an upper surface of an etched structure, thereby preventing increase of leakage current in a capacitor. CONSTITUTION: A film(200') is formed on an interlayer dielectric(210). The interlayer dielectric is a silicon oxide film which is formed on a semiconductor substrate. For the patterning of the film, an etching mask pattern(220) is formed. By etching the film, an opening(230) is formed within the film. In a bottom surface and a sidewall of the opening, the surface roughness exists. To remove the surface roughness of the opening, the dry-etching is continuously performed. The dry-etching is effected independent of removing the etching mask pattern. The dry-etching must be performed after removing the etching mask pattern to prevent the organic material from being deposited on the sidewall and the bottom surface of the opening.