SILICON IC DEVICE WITH DIRECT INDUCTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A silicon IC device with a direct inductor and a method for manufacturing the same are provided to prevent an energy loss of an inductor and reduction of an inductance by increasing a resistance of a silicon substrate. CONSTITUTION: The first insulating layer(31B) is formed on a silicon substrate(30) of the first conductive type. The second conductive type dopant is doped on a lower portion of the first insulating layer(31B) of the silicon substrate(30) and an intrinsic silicon(32) is formed thereby. The second insulating layer(37) is formed on the silicon substrate(30). An inductor(39) overlapped with the first insulating layer(31B) and the intrinsic silicon(32) is formed on the second insulating layer.