| 摘要 |
PURPOSE: A method for forming a cobalt silicide layer is provided to form uniformly a thickness of a CoSi2 layer by reducing roughness between a CoSi2 layer and a doped polysilicon layer. CONSTITUTION: A doped polysilicon layer(13) is formed on an upper portion of a substrate(10). An undoped amorphous silicon layer(14) is formed on the doped polysilicon layer(13). A cobalt layer(15) is formed on the undoped amorphous silicon layer. A cobalt silicide layer is formed by performing a thermal process. The cobalt silicide layer is formed by reacting the cobalt layer(15) with the doped amorphous silicon layer. The cobalt silicide layer is formed under a condition of a pressure of 760 Torr and a temperature of 850 degrees centigrade in N2 atmosphere.
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